The 7th International Workshop on Bulk Nitride Semiconductors (IWBNS VII)FREITAS, Jaime; SITAR, Zlatko; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2012, Vol 350, Num 1, issn 0022-0248, 100 p.Conference Proceedings

Free exciton absorption in Ga_1―xZn_xN_1―xO_x alloysMAOFENG DOU; BALDISSERA, Gustavo; PERSSON, Clas et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 17-20, issn 0022-0248, 4 p.Conference Paper

Zinc-blende and wurtzite Al_xGa_1―xN bulk crystals grown by molecular beam epitaxyNOVIKOV, S. V; STADDON, C. R; LUCKERT, F et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 80-84, issn 0022-0248, 5 p.Conference Paper

Development of GaN wafers for solid-state lighting via the ammonothermal methodLETTS, Edward; HASHIMOTO, Tadao; IKARI, Masanori et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 66-68, issn 0022-0248, 3 p.Conference Paper

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substratesNAGASHIMA, Toru; HAKOMORI, Akira; YANAGI, Hiroyuki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 75-79, issn 0022-0248, 5 p.Conference Paper

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxyHYUN JONG PARK; KIM, Hong-Yeol; JUN YOUNG BAE et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 85-88, issn 0022-0248, 4 p.Conference Paper

Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substratesFUJIKURA, Hajime; OSHIMA, Yuichi; MEGRO, Takeshi et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 38-43, issn 0022-0248, 6 p.Conference Paper

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaNFEIGELSON, B. N; ANDERSON, T. J; ABRAHAM, M et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H₂ and N₂KUMAGAI, Yoshinao; IGI, Takahiro; ISHIZUKI, Masanari et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 60-65, issn 0022-0248, 6 p.Conference Paper

Growth and strain characterization of high quality GaN crystal by HVPEHUIYUAN GENG; SUNAKAWA, Haruo; SUMI, Norihiko et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 44-49, issn 0022-0248, 6 p.Conference Paper

Growth of GaN boules via vertical HVPERICHTER, E; GRÜNDER, M; NETZEL, C et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 89-92, issn 0022-0248, 4 p.Conference Paper

Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxyFREITAS, J. A; CULBERTSON, J. C; MASTRO, M. A et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 33-37, issn 0022-0248, 5 p.Conference Paper

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPENOMURA, Takuya; OKUMURA, Kenta; MIYAKE, Hideto et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 69-71, issn 0022-0248, 3 p.Conference Paper

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed―seed configurationGRZEGORY, I; BOCKOWSKI, M; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 50-55, issn 0022-0248, 6 p.Conference Paper

On the formation of vacancy defects in III-nitride semiconductorsTUOMISTO, F; MÄKI, J.-M; RAUCH, C et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 93-97, issn 0022-0248, 5 p.Conference Paper

Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxyFREITAS, J. A; MASTRO, M. A; GLASER, E. R et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 27-32, issn 0022-0248, 6 p.Conference Paper

Development of a novel in situ monitoring technology for ammonothermal reactorsALT, Nicolas S. A; MEISSNER, Elke; SCHLUECKER, Eberhard et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 2-4, issn 0022-0248, 3 p.Conference Paper

Growth of bulk GaN crystal by Na flux method under various conditionsMORI, Y; IMADE, M; SASAKI, T et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 72-74, issn 0022-0248, 3 p.Conference Paper

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaNBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

Properties of nitrogen-doped titanium oxidesDAVID, D. G. F; GUERREIRO, J; DA SILVA, M. V. S et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 11-16, issn 0022-0248, 6 p.Conference Paper

Vapor-phase epitaxial growth of GaN films using Ga₂O vapor and NH₃IMADE, Mamoru; YUAN BU; SUMI, Tomoaki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 56-59, issn 0022-0248, 4 p.Conference Paper